Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide: Fid-Bau Portal

Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

Capano, M. A. / Cooper, J. A. / Melloch, M. R. / Saxler, A. / Mitchel, W. C.

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Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

Capano, M. A. / Cooper, J. A. / Melloch, M. R. / Saxler, A. / Mitchel, W. C.

Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

Capano, M. A. / Cooper, J. A. / Melloch, M. R. / Saxler, A. / Mitchel, W. C.

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Check availability in my library

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Document information

Title:

Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

Contributors:

Capano, M. A. (author) / Cooper, J. A. (author) / Melloch, M. R. (author) / Saxler, A. (author) / Mitchel, W. C. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 703-706

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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