Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

    New search for: Chatty, K.
    New search for: Banerjee, S.
    New search for: Chow, T. P.
    New search for: Gutmann, R. J.
    New search for: Arnold, E.
    New search for: Alok, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

    New search for: Chatty, K.
    New search for: Banerjee, S.
    New search for: Chow, T. P.
    New search for: Gutmann, R. J.
    New search for: Arnold, E.
    New search for: Alok, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

    New search for: Chatty, K.
    New search for: Banerjee, S.
    New search for: Chow, T. P.
    New search for: Gutmann, R. J.
    New search for: Arnold, E.
    New search for: Alok, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs

    Contributors:

    Chatty, K. (author) / Banerjee, S. (author) / Chow, T. P. (author) / Gutmann, R. J. (author) / Arnold, E. (author) / Alok, D. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 389/393 ; 1041-1044

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs

    Saks, N. S. / Mani, S. S. / Agarwal, A. K. et al. | British Library Online Contents | 2000

    Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs

    Dhar, S. / Ahyi, A.C. / Williams, J.R. et al. | British Library Online Contents | 2012

    Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs

    Lee, K. K. / Laube, M. / Ohshima, T. et al. | British Library Online Contents | 2007

    Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs

    Chatty, K. / Banerjee, S. / Chow, T. P. et al. | British Library Online Contents | 2002

    Inversion Layer Mobility in SiC MOSFETs

    Sridevan, S. / Baliga, B. J. | British Library Online Contents | 1998

    Back to top