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Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
Chatty, K. (Autor:in) / Banerjee, S. (Autor:in) / Chow, T. P. (Autor:in) / Gutmann, R. J. (Autor:in) / Arnold, E. (Autor:in) / Alok, D. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 1041-1044
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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