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Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
Dhar, S. (author) / Ahyi, A.C. (author) / Williams, J.R. (author) / Ryu, S.H. (author) / Agarwal, A.K. (author)
MATERIALS SCIENCE FORUM ; 717/720 ; 713-716
2012-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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