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Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs
Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs
Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs
Lee, K. K. (author) / Laube, M. (author) / Ohshima, T. (author) / Itoh, H. (author) / Pensl, G. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
2007-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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