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Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
Kojima, K. (author) / Ohno, T. (author) / Suzuki, S. (author) / Senzaki, J. (author) / Harada, S. (author) / Fukuda, K. (author) / Kushibe, M. (author) / Masahara, K. (author) / Ishida, Y. (author) / Takahashi, T. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 1053-1056
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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