A platform for research: civil engineering, architecture and urbanism
The Deep Boron Level in High-Voltage PiN Diodes
The Deep Boron Level in High-Voltage PiN Diodes
The Deep Boron Level in High-Voltage PiN Diodes
Aberg, D. (author) / Hallen, A. (author) / Osterman, J. (author) / Zimmermann, U. (author) / Svensson, B. G. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 1309-1312
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Simulations of High-Voltage 4H-SiC p^+nn^+ Diodes Using a Transient Model for the Deep Boron Level
British Library Online Contents | 2003
|High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation
British Library Online Contents | 2002
|British Library Online Contents | 1998
|Degradation of SiC High-Voltage pin Diodes
British Library Online Contents | 2005
|Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes
British Library Online Contents | 2000
|