A platform for research: civil engineering, architecture and urbanism
High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation
High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation
High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation
Negoro, Y. (author) / Miyamoto, N. (author) / Kimoto, T. (author) / Matsunami, H. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 1273-1276
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Avalanche Multiplication and Breakdown in 4H-SiC Diodes
British Library Online Contents | 2004
|High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown
British Library Online Contents | 2006
|Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes
British Library Online Contents | 2000
|Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance
British Library Online Contents | 2010
|British Library Online Contents | 2002
|