Simulations of High-Voltage 4H-SiC p^+nn^+ Diodes Using a Transient Model for the Deep Boron Level: Fid-Bau Portal

Simulations of High-Voltage 4H-SiC p^+nn^+ Diodes Using a Transient Model for the Deep Boron Level

Domeij, M. / Zimmermann, U. / Aberg, D. / Ostermann, J. / Hallen, A. / Ostling, M.

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Simulations of High-Voltage 4H-SiC p^+nn^+ Diodes Using a Transient Model for the Deep Boron Level

Domeij, M. / Zimmermann, U. / Aberg, D. / Ostermann, J. / Hallen, A. / Ostling, M.

Simulations of High-Voltage 4H-SiC p^+nn^+ Diodes Using a Transient Model for the Deep Boron Level

Domeij, M. / Zimmermann, U. / Aberg, D. / Ostermann, J. / Hallen, A. / Ostling, M.

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Title:

Simulations of High-Voltage 4H-SiC p^+nn^+ Diodes Using a Transient Model for the Deep Boron Level

Contributors:

Domeij, M. (author) / Zimmermann, U. (author) / Aberg, D. (author) / Ostermann, J. (author) / Hallen, A. (author) / Ostling, M. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 847-850

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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