Incorporation of Hydrogen (^1H and ^2H) into 4H-SiC during Epitaxial Growth: Fid-Bau Portal

Incorporation of Hydrogen (^1H and ^2H) into 4H-SiC during Epitaxial Growth

Linnarsson, M. K. / Forsberg, U. / Janson, M. S. / Janzen, E. / Svensson, B. G.

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Incorporation of Hydrogen (^1H and ^2H) into 4H-SiC during Epitaxial Growth

Linnarsson, M. K. / Forsberg, U. / Janson, M. S. / Janzen, E. / Svensson, B. G.

Incorporation of Hydrogen (^1H and ^2H) into 4H-SiC during Epitaxial Growth

Linnarsson, M. K. / Forsberg, U. / Janson, M. S. / Janzen, E. / Svensson, B. G.

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Check availability in my library

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Title:

Incorporation of Hydrogen (^1H and ^2H) into 4H-SiC during Epitaxial Growth

Contributors:

Linnarsson, M. K. (author) / Forsberg, U. (author) / Janson, M. S. (author) / Janzen, E. (author) / Svensson, B. G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 565-568

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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