4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Kojima, K. / Takahashi, T. / Ishida, Y. et al. | British Library Online Contents | 2004

Surface studies of SiC epitaxial layers grown by chemical vapor deposition

Kodigala, S. R. / Bhat, I. / Chow, T. P. et al. | British Library Online Contents | 2006

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Nishio, J. / Kushibe, M. / Masahara, K. et al. | British Library Online Contents | 2002

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

Kordina, O. / Irvine, K. / Sumakeris, J. et al. | British Library Online Contents | 1998

Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition

Wu, C. C. / Lin, K. C. / Chan, S. H. et al. | British Library Online Contents | 1993