Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Danielsson, O. / Jonsson, S. / Henry, A. et al. | British Library Online Contents | 2002

Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition

Wu, C. C. / Lin, K. C. / Chan, S. H. et al. | British Library Online Contents | 1993

Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition

Hallstedt, J. / Parent, A. / Ostling, M. et al. | British Library Online Contents | 2005

4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition

Kojima, K. / Takahashi, T. / Ishida, Y. et al. | British Library Online Contents | 2004

Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Nishio, J. / Kushibe, M. / Masahara, K. et al. | British Library Online Contents | 2002