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Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
Skromme, B. J. (author) / Palle, K. (author) / Poweleit, C. D. (author) / Bryant, L. R. (author) / Vetter, W. M. (author) / Dudley, M. (author) / Moore, K. (author) / Gehoski, T. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 455-458
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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