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An etchant for delineation of flow pattern defects in heavily doped p-type silicon wafers

Xu, T. / Zhang, X. / Ma, X. / Yang, D.

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An etchant for delineation of flow pattern defects in heavily doped p-type silicon wafers

Xu, T. / Zhang, X. / Ma, X. / Yang, D.

An etchant for delineation of flow pattern defects in heavily doped p-type silicon wafers

Xu, T. / Zhang, X. / Ma, X. / Yang, D.

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Access via TIB

Check availability in my library

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Document information

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Document information

Title:

An etchant for delineation of flow pattern defects in heavily doped p-type silicon wafers

Contributors:

Xu, T. (author) / Zhang, X. (author) / Ma, X. (author) / Yang, D. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 893-898

Publication date:

2013-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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