Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy: Fid-Bau Portal

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

Kawasuso, A. / Weidner, M. / Redmann, F. / Frank, T. / Krause-Rehberg, R. / Pensl, G. / Sperr, P. / Triftshauser, W. / Itoh, H.

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Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

Kawasuso, A. / Weidner, M. / Redmann, F. / Frank, T. / Krause-Rehberg, R. / Pensl, G. / Sperr, P. / Triftshauser, W. / Itoh, H.

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

Kawasuso, A. / Weidner, M. / Redmann, F. / Frank, T. / Krause-Rehberg, R. / Pensl, G. / Sperr, P. / Triftshauser, W. / Itoh, H.

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Title:

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

Contributors:

Kawasuso, A. (author) / Weidner, M. (author) / Redmann, F. (author) / Frank, T. (author) / Krause-Rehberg, R. (author) / Pensl, G. (author) / Sperr, P. (author) / Triftshauser, W. (author) / Itoh, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 489-492

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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