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    Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide

    New search for: Fukuda, Y.
    New search for: Nishikawa, K.
    New search for: Shimizu, M.
    New search for: Iwakuro, H.

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    Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide

    New search for: Fukuda, Y.
    New search for: Nishikawa, K.
    New search for: Shimizu, M.
    New search for: Iwakuro, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide

    New search for: Fukuda, Y.
    New search for: Nishikawa, K.
    New search for: Shimizu, M.
    New search for: Iwakuro, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide

    Contributors:

    Fukuda, Y. (author) / Nishikawa, K. (author) / Shimizu, M. (author) / Iwakuro, H. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 389/393 ; 671-674

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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