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Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide
Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide
Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide
Fukuda, Y. (author) / Nishikawa, K. (author) / Shimizu, M. (author) / Iwakuro, H. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 671-674
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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