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Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide
Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide
Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide
Fukuda, Y. (Autor:in) / Nishikawa, K. (Autor:in) / Shimizu, M. (Autor:in) / Iwakuro, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 389/393 ; 671-674
01.01.2002
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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