Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT): Fid-Bau Portal

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

Neuberger, R. / Muller, G. / Eickhoff, M. / Ambacher, O. / Stutzmann, M.

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Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

Neuberger, R. / Muller, G. / Eickhoff, M. / Ambacher, O. / Stutzmann, M.

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

Neuberger, R. / Muller, G. / Eickhoff, M. / Ambacher, O. / Stutzmann, M.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

Contributors:

Neuberger, R. (author) / Muller, G. (author) / Eickhoff, M. (author) / Ambacher, O. (author) / Stutzmann, M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 93 ; 143 - 146

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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