Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon

Roensch, S. / Sizov, V. / Yagi, T. et al. | British Library Online Contents | 2014

Current Collapse Characteristic of AlGaN/GaN MIS-HEMT

Yagi, S. / Shimizu, M. / Yano, Y. et al. | British Library Online Contents | 2009

2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Perez-Tomas, A. / Placidi, M. / Baron, N. et al. | British Library Online Contents | 2010

Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation

Lalinsky, T. / Vallo, M. / Vanko, G. et al. | British Library Online Contents | 2013

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors

Shimizu, M. / Inada, M. / Yagi, S. et al. | British Library Online Contents | 2009