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    Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

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    New search for: Wu, Y.

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    Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

    New search for: Lee, Y. M.
    New search for: Wu, Y.

    Access

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    Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

    New search for: Lee, Y. M.
    New search for: Wu, Y.

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Title:

    Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

    Contributors:

    Lee, Y. M. (author) / Wu, Y. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 254 ; 4591-4598

    Publication date:

    2008-01-01

    Size:

    8 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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