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Ab-initio Calculation of Si-K and Si-L ELNES Edges in an extended Inactive Defect Model of Crystalline Silicon
Ab-initio Calculation of Si-K and Si-L ELNES Edges in an extended Inactive Defect Model of Crystalline Silicon
Ab-initio Calculation of Si-K and Si-L ELNES Edges in an extended Inactive Defect Model of Crystalline Silicon
Chen, Y. (author) / Mo, S.-D. (author) / Kohyama, M. (author) / Kohno, H. (author) / Takeda, S. (author) / Ching, W.-Y. (author)
MATERIALS TRANSACTIONS ; 43 ; 1430-1434
2002-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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