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High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

Liao, F. / Park, S. / Larson, J. M. / Zachariah, M. R. / Girshick, S. L.

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High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

Liao, F. / Park, S. / Larson, J. M. / Zachariah, M. R. / Girshick, S. L.

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

Liao, F. / Park, S. / Larson, J. M. / Zachariah, M. R. / Girshick, S. L.

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Check availability in my library

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Document information

Title:

High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma

Contributors:

Liao, F. (author) / Park, S. (author) / Larson, J. M. (author) / Zachariah, M. R. (author) / Girshick, S. L. (author)

Published in:

MATERIALS LETTERS ; 57 ; 1982-1986

Publication date:

2003-01-01

Size:

5 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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