Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling: Fid-Bau Portal

Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling

Taishi, T. / Huang, X. / Kubota, M. / Kajigaya, T. / Fukami, T. / Hoshikawa, K.

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Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling

Taishi, T. / Huang, X. / Kubota, M. / Kajigaya, T. / Fukami, T. / Hoshikawa, K.

Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling

Taishi, T. / Huang, X. / Kubota, M. / Kajigaya, T. / Fukami, T. / Hoshikawa, K.

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Title:

Heavily boron-doped Czochralski (CZ) silicon crystal growth: segregation and constitutional supercooling

Contributors:

Taishi, T. (author) / Huang, X. (author) / Kubota, M. (author) / Kajigaya, T. (author) / Fukami, T. (author) / Hoshikawa, K. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 72 ; 169 - 172

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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