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New challenges for 300mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding

Dragoi, V. / Lindner, P. / Tischler, M. / Schaefer, C.

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New challenges for 300mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding

Dragoi, V. / Lindner, P. / Tischler, M. / Schaefer, C.

New challenges for 300mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding

Dragoi, V. / Lindner, P. / Tischler, M. / Schaefer, C.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

New challenges for 300mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding

Contributors:

Dragoi, V. (author) / Lindner, P. (author) / Tischler, M. (author) / Schaefer, C. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 5 ; 425-428

Publication date:

2002-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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