Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD: Fid-Bau Portal

Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD

Qin, Z. X. / Chen, Z. Z. / Zhang, H. X. / Ding, X. M. / Hu, X. D. / Yu, T. J. / Tong, Y. Z. / Zhang, G. Y.

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Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD

Qin, Z. X. / Chen, Z. Z. / Zhang, H. X. / Ding, X. M. / Hu, X. D. / Yu, T. J. / Tong, Y. Z. / Zhang, G. Y.

Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD

Qin, Z. X. / Chen, Z. Z. / Zhang, H. X. / Ding, X. M. / Hu, X. D. / Yu, T. J. / Tong, Y. Z. / Zhang, G. Y.

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Document information

Title:

Effect of O2/CHF3 plasma treatment on n-type GaN grown on sapphire by MOCVD

Contributors:

Qin, Z. X. (author) / Chen, Z. Z. (author) / Zhang, H. X. (author) / Ding, X. M. (author) / Hu, X. D. (author) / Yu, T. J. (author) / Tong, Y. Z. (author) / Zhang, G. Y. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 5 ; 473-475

Publication date:

2002-01-01

Size:

3 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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