Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization: Fid-Bau Portal

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Pons, M. / Baillet, F. / Blanquet, E. / Pernot, E. / Madar, R. / Chaussende, D. / Mermoux, M. / Di Coccio, L. / Ferret, P. / Feuillet, G.

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Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Pons, M. / Baillet, F. / Blanquet, E. / Pernot, E. / Madar, R. / Chaussende, D. / Mermoux, M. / Di Coccio, L. / Ferret, P. / Feuillet, G.

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Pons, M. / Baillet, F. / Blanquet, E. / Pernot, E. / Madar, R. / Chaussende, D. / Mermoux, M. / Di Coccio, L. / Ferret, P. / Feuillet, G.

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Title:

Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization

Contributors:

Pons, M. (author) / Baillet, F. (author) / Blanquet, E. (author) / Pernot, E. (author) / Madar, R. (author) / Chaussende, D. (author) / Mermoux, M. (author) / Di Coccio, L. (author) / Ferret, P. (author) / Feuillet, G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 212-213 ; 177-183

Publication date:

2003-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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