Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers: Fid-Bau Portal

Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers

Soueidan, M. / Ferro, G. / Nsouli, B. / Habka, N. / Souliere, V. / Younes, G. / Zahzaman, K. / Bluet, J. M. / Monteil, Y.

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Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers

Soueidan, M. / Ferro, G. / Nsouli, B. / Habka, N. / Souliere, V. / Younes, G. / Zahzaman, K. / Bluet, J. M. / Monteil, Y.

Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers

Soueidan, M. / Ferro, G. / Nsouli, B. / Habka, N. / Souliere, V. / Younes, G. / Zahzaman, K. / Bluet, J. M. / Monteil, Y.

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Title:

Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers

Contributors:

Soueidan, M. (author) / Ferro, G. (author) / Nsouli, B. (author) / Habka, N. (author) / Souliere, V. (author) / Younes, G. (author) / Zahzaman, K. (author) / Bluet, J. M. (author) / Monteil, Y. (author) / Wright, N.

Published in:

Silicon Carbide and Related Materials 2006 ; 65-68

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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