In situ B doping of SiGe(C) using BCl3 in ultraclean hot-wall LPCVD

Kunii, Y. / Inokuchi, Y. / Moriya, A. et al. | British Library Online Contents | 2004

Electrical properties of W delta doped Si epitaxial films grown on Si(100) by ultraclean low-pressure chemical vapor deposition

Kurosawa, T. / Komatsu, T. / Sakuraba, M. et al. | British Library Online Contents | 2005

Atomic-layer etching of Ge using an ultraclean ECR plasma

Sugiyama, T. / Matsuura, T. / Murota, J. | British Library Online Contents | 1997

Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition

Tanno, H. / Sakuraba, M. / Tillack, B. et al. | British Library Online Contents | 2008

Ultraclean Surface Processing of Silicon Wafers : Secrets of VLSI Manufacturing

Hattori, Takeshi | TIBKAT | 1998