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In situ B doping of SiGe(C) using BCl3 in ultraclean hot-wall LPCVD
In situ B doping of SiGe(C) using BCl3 in ultraclean hot-wall LPCVD
In situ B doping of SiGe(C) using BCl3 in ultraclean hot-wall LPCVD
Kunii, Y. (author) / Inokuchi, Y. (author) / Moriya, A. (author) / Kurokawa, H. (author) / Murota, J. (author)
APPLIED SURFACE SCIENCE ; 224 ; 68-72
2004-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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