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    Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics

    New search for: Ohshima, C.
    New search for: Taguchi, J.
    New search for: Kashiwagi, I.
    New search for: Yamamoto, H.
    New search for: Ohmi, S.
    New search for: Iwai, H.

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    Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics

    New search for: Ohshima, C.
    New search for: Taguchi, J.
    New search for: Kashiwagi, I.
    New search for: Yamamoto, H.
    New search for: Ohmi, S.
    New search for: Iwai, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics

    New search for: Ohshima, C.
    New search for: Taguchi, J.
    New search for: Kashiwagi, I.
    New search for: Yamamoto, H.
    New search for: Ohmi, S.
    New search for: Iwai, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics

    Contributors:

    Ohshima, C. (author) / Taguchi, J. (author) / Kashiwagi, I. (author) / Yamamoto, H. (author) / Ohmi, S. (author) / Iwai, H. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 216 ; 302-306

    Publication date:

    2003-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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