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    Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE

    New search for: Takahashi, H.
    New search for: Miyoshi, Y.
    New search for: Nakajima, F.
    New search for: Mohan, P.
    New search for: Motohisa, J.
    New search for: Fukui, T.

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    Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE

    New search for: Takahashi, H.
    New search for: Miyoshi, Y.
    New search for: Nakajima, F.
    New search for: Mohan, P.
    New search for: Motohisa, J.
    New search for: Fukui, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE

    New search for: Takahashi, H.
    New search for: Miyoshi, Y.
    New search for: Nakajima, F.
    New search for: Mohan, P.
    New search for: Motohisa, J.
    New search for: Fukui, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE

    Contributors:

    Takahashi, H. (author) / Miyoshi, Y. (author) / Nakajima, F. (author) / Mohan, P. (author) / Motohisa, J. (author) / Fukui, T. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 216 ; 402-406

    Publication date:

    2003-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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