In situ monitoring of InAs-on-GaAs quantum dot formation in MOVPE by reflectance-anisotropy-spectroscopy and ellipsometry: Fid-Bau Portal

In situ monitoring of InAs-on-GaAs quantum dot formation in MOVPE by reflectance-anisotropy-spectroscopy and ellipsometry

Steimetz, E. / Zettler, J.-T. / Schienle, F. / Trepk, T. / Wethkamp, T. / Richter, W. / Sieber, I.

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In situ monitoring of InAs-on-GaAs quantum dot formation in MOVPE by reflectance-anisotropy-spectroscopy and ellipsometry

Steimetz, E. / Zettler, J.-T. / Schienle, F. / Trepk, T. / Wethkamp, T. / Richter, W. / Sieber, I.

In situ monitoring of InAs-on-GaAs quantum dot formation in MOVPE by reflectance-anisotropy-spectroscopy and ellipsometry

Steimetz, E. / Zettler, J.-T. / Schienle, F. / Trepk, T. / Wethkamp, T. / Richter, W. / Sieber, I.

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Title:

In situ monitoring of InAs-on-GaAs quantum dot formation in MOVPE by reflectance-anisotropy-spectroscopy and ellipsometry

Contributors:

Steimetz, E. (author) / Zettler, J.-T. (author) / Schienle, F. (author) / Trepk, T. (author) / Wethkamp, T. (author) / Richter, W. (author) / Sieber, I. (author)

Published in:

APPLIED SURFACE SCIENCE ; 107 ; 203-211

Publication date:

1996-01-01

Size:

9 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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