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Room temperature 1.5mm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy
Room temperature 1.5mm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy
Room temperature 1.5mm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy
Fujiwara, Y. (author) / Koizumi, A. (author) / Urakami, A. (author) / Yoshikane, T. (author) / Inoue, K. (author) / Takeda, Y. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 105 ; 56-59
2003-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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British Library Online Contents | 2003
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