Epitaxial growth of 4H-SiC(0338) and control of MOS interface: Fid-Bau Portal

Epitaxial growth of 4H-SiC(0338) and control of MOS interface

Kimoto, T. / Hirao, T. / Fujihira, K. / Kosugi, H. / Danno, K. / Matsunami, H.

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Epitaxial growth of 4H-SiC(0338) and control of MOS interface

Kimoto, T. / Hirao, T. / Fujihira, K. / Kosugi, H. / Danno, K. / Matsunami, H.

Epitaxial growth of 4H-SiC(0338) and control of MOS interface

Kimoto, T. / Hirao, T. / Fujihira, K. / Kosugi, H. / Danno, K. / Matsunami, H.

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Title:

Epitaxial growth of 4H-SiC(0338) and control of MOS interface

Contributors:

Kimoto, T. (author) / Hirao, T. (author) / Fujihira, K. (author) / Kosugi, H. (author) / Danno, K. (author) / Matsunami, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 216 ; 497-501

Publication date:

2003-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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