Type and charge states of point defects in heavily As- and B-doped silicon: Fid-Bau Portal

Type and charge states of point defects in heavily As- and B-doped silicon

Nakabayashi, Y. / Osman, H. I. / Yokota, K. / Toyonaga, K. / Matsumoto, S. / Murota, J. / Wada, K. / Abe, T.

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Type and charge states of point defects in heavily As- and B-doped silicon

Nakabayashi, Y. / Osman, H. I. / Yokota, K. / Toyonaga, K. / Matsumoto, S. / Murota, J. / Wada, K. / Abe, T.

Type and charge states of point defects in heavily As- and B-doped silicon

Nakabayashi, Y. / Osman, H. I. / Yokota, K. / Toyonaga, K. / Matsumoto, S. / Murota, J. / Wada, K. / Abe, T.

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Title:

Type and charge states of point defects in heavily As- and B-doped silicon

Contributors:

Nakabayashi, Y. (author) / Osman, H. I. (author) / Yokota, K. (author) / Toyonaga, K. (author) / Matsumoto, S. (author) / Murota, J. (author) / Wada, K. (author) / Abe, T. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 15-19

Publication date:

2003-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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