SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices: Fid-Bau Portal

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

Burk, A.A. / O Loughlin, M.J. / Sumakeris, J.J. / Hallin, C. / Berkman, E. / Balakrishna, V. / Young, J. / Garrett, L. / Irvine, K.G. / Powell, A.R.

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SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

Burk, A.A. / O Loughlin, M.J. / Sumakeris, J.J. / Hallin, C. / Berkman, E. / Balakrishna, V. / Young, J. / Garrett, L. / Irvine, K.G. / Powell, A.R.

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

Burk, A.A. / O Loughlin, M.J. / Sumakeris, J.J. / Hallin, C. / Berkman, E. / Balakrishna, V. / Young, J. / Garrett, L. / Irvine, K.G. / Powell, A.R.

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Document information

Title:

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

Contributors:

Burk, A.A. (author) / O Loughlin, M.J. (author) / Sumakeris, J.J. (author) / Hallin, C. (author) / Berkman, E. (author) / Balakrishna, V. (author) / Young, J. (author) / Garrett, L. (author) / Irvine, K.G. (author) / Powell, A.R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 77-82

Publication date:

2009-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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