Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process: Fid-Bau Portal

Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

Tanimoto, S. / Kiritani, N. / Hoshi, M. / Okushi, H. / Arai, K.

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Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

Tanimoto, S. / Kiritani, N. / Hoshi, M. / Okushi, H. / Arai, K.

Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

Tanimoto, S. / Kiritani, N. / Hoshi, M. / Okushi, H. / Arai, K.

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Document information

Title:

Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process

Contributors:

Tanimoto, S. (author) / Kiritani, N. (author) / Hoshi, M. (author) / Okushi, H. (author) / Arai, K. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 725-730

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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