Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
Tanimoto, S. (Autor:in) / Kiritani, N. (Autor:in) / Hoshi, M. (Autor:in) / Okushi, H. (Autor:in) / Arai, K. (Autor:in) / Bergman, P. / Janzen, E.
01.01.2003
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication
British Library Online Contents | 2011
|First AlGaN/GaN MOSFET with photoanodic gate dielectric
British Library Online Contents | 2002
|British Library Online Contents | 2004
|3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide
British Library Online Contents | 2011
|Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
British Library Online Contents | 2014
|