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Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

Constant, A. / Camara, N. / Montserrat, J. / Pausas, E. / Camassel, J. / Godignon, P.

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Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

Constant, A. / Camara, N. / Montserrat, J. / Pausas, E. / Camassel, J. / Godignon, P.

Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

Constant, A. / Camara, N. / Montserrat, J. / Pausas, E. / Camassel, J. / Godignon, P.

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Access via TIB

Check availability in my library

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Document information

Title:

Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

Contributors:

Constant, A. (author) / Camara, N. (author) / Montserrat, J. (author) / Pausas, E. (author) / Camassel, J. (author) / Godignon, P. (author) / Monakhov, E.V. / Hornos, T. / Svensson, B.G.

Published in:

Silicon Carbide and Related Materials 2010 ; 500-503

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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