A platform for research: civil engineering, architecture and urbanism
Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process
Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process
Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process
Hatakeyama, T. (author) / Kushibe, M. (author) / Watanabe, T. (author) / Imai, S. (author) / Shinohe, T. (author) / Bergman, P. / Janzen, E.
2003-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Defect Related Leakage Current Components in SiC Schottky Barrier Diode
British Library Online Contents | 2012
|Reverse Characteristics of a 4H-SiC Schottky Barrier Diode
British Library Online Contents | 2002
|Schottky Diode Leakage Current Fluctuations: Electrostatically Induced Flexoelectricity in Silicon
Wiley | 2024
|Schottky Diode Leakage Current Fluctuations: Electrostatically Induced Flexoelectricity in Silicon
Wiley | 2024
|British Library Online Contents | 2012
|