Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diode by Atomic Force Microscopy: Fid-Bau Portal

Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diode by Atomic Force Microscopy

Katsuno, T. / Watanabe, Y. / Ishikawa, T. / Fujiwara, H. / Konishi, M. / Morino, T. / Endo, T.

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Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diode by Atomic Force Microscopy

Katsuno, T. / Watanabe, Y. / Ishikawa, T. / Fujiwara, H. / Konishi, M. / Morino, T. / Endo, T.

Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diode by Atomic Force Microscopy

Katsuno, T. / Watanabe, Y. / Ishikawa, T. / Fujiwara, H. / Konishi, M. / Morino, T. / Endo, T.

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Document information

Title:

Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diode by Atomic Force Microscopy

Contributors:

Katsuno, T. (author) / Watanabe, Y. (author) / Ishikawa, T. (author) / Fujiwara, H. (author) / Konishi, M. (author) / Morino, T. (author) / Endo, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 375-378

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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