A platform for research: civil engineering, architecture and urbanism
Helium implantation in silicon: the effects of implantation temperature
Helium implantation in silicon: the effects of implantation temperature
Helium implantation in silicon: the effects of implantation temperature
Oliviero, E. (author) / David, M. L. (author) / Fedorov, A. V. (author) / van Veen, A. (author) / Beaufort, M. F. (author) / Barbot, J. F. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 102 ; 222-227
2003-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Modifications of He implantation induced cavities in silicon by MeV silicon implantation
British Library Online Contents | 2006
|Effects of Helium Implantation on the Mechanical Properties of 4H-SiC
British Library Online Contents | 2010
|Helium desorption from cavities induced by high energy 3He and 4He implantation in silicon
British Library Online Contents | 2000
|Shallow Nanoporous Surface Layers Produced by Helium Ion Implantation
British Library Online Contents | 2001
|High Temperature Implantation of Aluminum in 4H Silicon Carbide
British Library Online Contents | 2007
|