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Critical dimension improvement of plasma enhanced chemical vapor deposition silicon nitride thin films in GaAs devices

Hallakoun, I. / Toledo, I. / Kaplun, J. / Bunin, G. / Leibovitch, M. / Shapira, Y.

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Critical dimension improvement of plasma enhanced chemical vapor deposition silicon nitride thin films in GaAs devices

Hallakoun, I. / Toledo, I. / Kaplun, J. / Bunin, G. / Leibovitch, M. / Shapira, Y.

Critical dimension improvement of plasma enhanced chemical vapor deposition silicon nitride thin films in GaAs devices

Hallakoun, I. / Toledo, I. / Kaplun, J. / Bunin, G. / Leibovitch, M. / Shapira, Y.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Critical dimension improvement of plasma enhanced chemical vapor deposition silicon nitride thin films in GaAs devices

Contributors:

Hallakoun, I. (author) / Toledo, I. (author) / Kaplun, J. (author) / Bunin, G. (author) / Leibovitch, M. (author) / Shapira, Y. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 102 ; 352-357

Publication date:

2003-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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