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Deep level defects in H^+ implanted 6H-SiC epilayers and in silicon carbide on insulator structures
Deep level defects in H^+ implanted 6H-SiC epilayers and in silicon carbide on insulator structures
Deep level defects in H^+ implanted 6H-SiC epilayers and in silicon carbide on insulator structures
Hugonnard-Bruyere, E. (author) / Lauer, V. (author) / Guillot, G. (author) / Jaussaud, C. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 382 - 388
1999-01-01
7 pages
Article (Journal)
English
DDC:
620.11
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