High-quality ultrathin chemical-vapor-deposited Ta2O5 capacitors prepared by high-density plasma annealing: Fid-Bau Portal

High-quality ultrathin chemical-vapor-deposited Ta2O5 capacitors prepared by high-density plasma annealing

Liu, C. H. / Chang, S. J. / Chen, J. F. / Chen, S. C. / Lee, J. S. / Liaw, U. H.

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High-quality ultrathin chemical-vapor-deposited Ta2O5 capacitors prepared by high-density plasma annealing

Liu, C. H. / Chang, S. J. / Chen, J. F. / Chen, S. C. / Lee, J. S. / Liaw, U. H.

High-quality ultrathin chemical-vapor-deposited Ta2O5 capacitors prepared by high-density plasma annealing

Liu, C. H. / Chang, S. J. / Chen, J. F. / Chen, S. C. / Lee, J. S. / Liaw, U. H.

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Check availability in my library

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Document information

Title:

High-quality ultrathin chemical-vapor-deposited Ta2O5 capacitors prepared by high-density plasma annealing

Contributors:

Liu, C. H. (author) / Chang, S. J. (author) / Chen, J. F. (author) / Chen, S. C. (author) / Lee, J. S. (author) / Liaw, U. H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 106 ; 234-241

Publication date:

2004-01-01

Size:

8 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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