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Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
Matocha, K. (author) / Chow, T. P. (author) / Gutmann, R. J. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 1535-1538
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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