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Selective epitaxial growth of SiGe:C for high speed HBTs

Schafer, H. / Bock, J. / Stengl, R. / Knapp, H. / Aufinger, K. / Wurzer, M. / Boguth, S. / Rest, M. / Schreiter, R. / Meister, T. F.

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Selective epitaxial growth of SiGe:C for high speed HBTs

Schafer, H. / Bock, J. / Stengl, R. / Knapp, H. / Aufinger, K. / Wurzer, M. / Boguth, S. / Rest, M. / Schreiter, R. / Meister, T. F.

Selective epitaxial growth of SiGe:C for high speed HBTs

Schafer, H. / Bock, J. / Stengl, R. / Knapp, H. / Aufinger, K. / Wurzer, M. / Boguth, S. / Rest, M. / Schreiter, R. / Meister, T. F.

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Document information

Title:

Selective epitaxial growth of SiGe:C for high speed HBTs

Contributors:

Schafer, H. (author) / Bock, J. (author) / Stengl, R. (author) / Knapp, H. (author) / Aufinger, K. (author) / Wurzer, M. (author) / Boguth, S. (author) / Rest, M. (author) / Schreiter, R. (author) / Meister, T. F. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 18-23

Publication date:

2004-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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