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Numerical simulation of strained Si/SiGe devices: the hierarchical approach

Meinerzhagen, B. / Jungemann, C. / Neinhus, B. / Bartels, M.

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Numerical simulation of strained Si/SiGe devices: the hierarchical approach

Meinerzhagen, B. / Jungemann, C. / Neinhus, B. / Bartels, M.

Numerical simulation of strained Si/SiGe devices: the hierarchical approach

Meinerzhagen, B. / Jungemann, C. / Neinhus, B. / Bartels, M.

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Order at Subito €

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Document information

Title:

Numerical simulation of strained Si/SiGe devices: the hierarchical approach

Contributors:

Meinerzhagen, B. (author) / Jungemann, C. (author) / Neinhus, B. (author) / Bartels, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 235-240

Publication date:

2004-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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