A platform for research: civil engineering, architecture and urbanism
Minority carrier lifetime and diffusion length in Si1-x-yGexCy and Si1-yCy heterolayers
Minority carrier lifetime and diffusion length in Si1-x-yGexCy and Si1-yCy heterolayers
Minority carrier lifetime and diffusion length in Si1-x-yGexCy and Si1-yCy heterolayers
Samanta, S. K. (author) / Dalapati, G. K. (author) / Chatterjee, S. (author) / Maiti, C. K. (author)
APPLIED SURFACE SCIENCE ; 224 ; 283-287
2004-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Mapping of the local minority carrier diffusion length in silicon wafers
British Library Online Contents | 1993
|A study on the minority carrier diffusion length in n-type GaN films
British Library Online Contents | 2007
|Minority carrier lifetime and metallic-impurity mapping in silicon wafers
British Library Online Contents | 2001
|Electrical characterization of TiSi/Si1-x-yGexCy Schottky diodes
British Library Online Contents | 2004
|British Library Online Contents | 2003
|