A platform for research: civil engineering, architecture and urbanism
Investigation of minority carrier diffusion length in shallow junctions by angle-resolved illumination technique
Investigation of minority carrier diffusion length in shallow junctions by angle-resolved illumination technique
Investigation of minority carrier diffusion length in shallow junctions by angle-resolved illumination technique
Parretta, A. (author) / Grillo, P. (author) / Tucci, M. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 102 ; 179-183
2003-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Mapping of the local minority carrier diffusion length in silicon wafers
British Library Online Contents | 1993
|A study on the minority carrier diffusion length in n-type GaN films
British Library Online Contents | 2007
|Minority carrier lifetime and diffusion length in Si1-x-yGexCy and Si1-yCy heterolayers
British Library Online Contents | 2004
|Formation of contacts to shallow junctions using titanium silicide with diffusion barriers
British Library Online Contents | 1998
|Minority Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique
British Library Online Contents | 1998
|